SAN JOSE, USA: Philips Lumileds announced that each one of its three design, development and manufacturing sites have been recertified for ISO9001:2008 (General Quality System Standard) and TS16949:2009, (Automotive Quality System Standard) following a comprehensive audit by TUV NORD.
Continuing certification and refinement of the company’s manufacturing processes is one element of the company’s commitment to quality production and delivery that enable the growth and adoption of solid-state lighting solutions. All three sites, San Jose, Singapore and Penang were certified with, zero non-conformities, representing an approach and commitment to quality that is consistent throughout the company.
ISO9001 is an international standard for quality management systems. Adhering to these standards, companies demonstrate an ability to consistently meet statutory and regulatory requirements and improve customer satisfaction through continuous process improvements to deliver quality and confidence.
TS16949 is an international standard for automotive industry suppliers and it defines quality management system requirements. As one of the world’s leading suppliers of LEDs for exterior vehicle applications, Philips Lumileds is dedicated to achieving the highest standards and establishing a framework for continued improvements.
Tuesday, December 7, 2010
Antenova launches M10372 GPS RADIONOVA with CSR's SiRFstarIV architecture
CAMBRIDGE, ENGLAND: Antenova Ltd, the integrated antenna and RF solutions company, announced M10372 GPS RADIONOVA – a planar mount GPS Radio Antenna Module incorporating CSR’s market leading SiRFstarIV GPS chipset with Antenova’s high performing patented antenna technology in a compact low profile package.
Antenova further announced the M10372 is ideally suited for a multitude of embedded GPS, machine-to-machine (M2M) and mobile device applications such as personal navigation devices (PNDs), automatic vehicle locators (AVLs), trackers and portable media players (PMPs).
Greg McCray, CEO of Antenova said: "CSR is a recognized leader in the GPS semiconductor market, and the new SiRFstarIV architecture provides many new features and benefits for Antenova’s GPS RADIONOVA customers. Some of the new features include adaptive micro-power controller to maintain hot-start conditions with minimal power consumption and active jammer remover which helps maximize performance in potentially noisy environments.
"The improved tracking, navigation and acquisition sensitivity of the new SiRFstarIV chip combined with Antenova’s high performing omni-directional antenna makes the M10372 an ideal GPS system solution for next generation embedded device and M2M applications. And the M10372 has been designed to provide existing GPS RADIONOVA customers an easy migration path for their next generation products."
The M10372 is a highly integrated GPS RF antenna module suitable for L1-band GPS and A-GPS systems. The device combines CSR’s SiRFstarIV GSD4e GPS receiver IC with Antenova’s high efficiency antenna technology.
All front-end components are contained in a small 29 x 13 x 4.7mm single package laminate base module providing a complete GPS receiver for optimum performance. M10372 operates on a single 1.8V positive bias supply with ultra low power consumption and available low power modes for further power savings.
M10372 is supported by SiRF stand alone software and is compatible with UART, SPI and I2C host processor interfaces. Custom versions of the module can also incorporate an antenna switch for optional active antenna connection.
Antenova further announced the M10372 is ideally suited for a multitude of embedded GPS, machine-to-machine (M2M) and mobile device applications such as personal navigation devices (PNDs), automatic vehicle locators (AVLs), trackers and portable media players (PMPs).
Greg McCray, CEO of Antenova said: "CSR is a recognized leader in the GPS semiconductor market, and the new SiRFstarIV architecture provides many new features and benefits for Antenova’s GPS RADIONOVA customers. Some of the new features include adaptive micro-power controller to maintain hot-start conditions with minimal power consumption and active jammer remover which helps maximize performance in potentially noisy environments.
"The improved tracking, navigation and acquisition sensitivity of the new SiRFstarIV chip combined with Antenova’s high performing omni-directional antenna makes the M10372 an ideal GPS system solution for next generation embedded device and M2M applications. And the M10372 has been designed to provide existing GPS RADIONOVA customers an easy migration path for their next generation products."
The M10372 is a highly integrated GPS RF antenna module suitable for L1-band GPS and A-GPS systems. The device combines CSR’s SiRFstarIV GSD4e GPS receiver IC with Antenova’s high efficiency antenna technology.
All front-end components are contained in a small 29 x 13 x 4.7mm single package laminate base module providing a complete GPS receiver for optimum performance. M10372 operates on a single 1.8V positive bias supply with ultra low power consumption and available low power modes for further power savings.
M10372 is supported by SiRF stand alone software and is compatible with UART, SPI and I2C host processor interfaces. Custom versions of the module can also incorporate an antenna switch for optional active antenna connection.
Saturday, December 4, 2010
Supertex's dimmable, high voltage EL driver for backlighting laptop keyboards
SUNNYVALE, USA: Supertex Inc. has introduced the HV816, a dimmable, low noise, electroluminescent (EL) lamp driver designed to drive large area EL lamps used in backlighting keyboards of notebooks, netbooks, and electronic organizers, as well as advertising display signs.
HV816 can operate from an input voltage of 2.7V to 5.5V, which is ideally suitable for 3.3V and 5V systems, as well as systems using a single cell lithium battery. It can deliver output voltages to 360V peak-to-peak for high brightness, and adjustable output regulation for brightness control and power saving.
The IC offers flexibility by providing independent lamp and converter frequency settings and adjustable output rise and fall time. It uses a minimum number of external components to minimize the PC board area.
"By using an EL lamp and the HV816, manufacturers can develop thin, dimmable backlit keyboards for notebook and netbook computers that consume less power and offer more uniform brightness without hot spots when compared to other backlighting solutions," states Hernan DeGuzman, VP of Marketing for Supertex.
"This IC has split supply capability for improved efficiency and prolonged battery life and works with input voltages as low as 2.7 volts."
HV816 is available in QFN-16 (HV816K6-G) and SOW-16 (HV816SG-G) packages. HV816SG-G has a heat slug for high power applications. Both packages are RoHS compliant.
Samples for HV816K6-G are available from stock. Samples for HV816SG-G will be available in 3-4 weeks. Lead-time for production quantities is 4-6 weeks ARO. Pricing is $2.07 each for HV816K6-G and $2.63 each for HV816SG-G in 1K quantities.
HV816 can operate from an input voltage of 2.7V to 5.5V, which is ideally suitable for 3.3V and 5V systems, as well as systems using a single cell lithium battery. It can deliver output voltages to 360V peak-to-peak for high brightness, and adjustable output regulation for brightness control and power saving.
The IC offers flexibility by providing independent lamp and converter frequency settings and adjustable output rise and fall time. It uses a minimum number of external components to minimize the PC board area.
"By using an EL lamp and the HV816, manufacturers can develop thin, dimmable backlit keyboards for notebook and netbook computers that consume less power and offer more uniform brightness without hot spots when compared to other backlighting solutions," states Hernan DeGuzman, VP of Marketing for Supertex.
"This IC has split supply capability for improved efficiency and prolonged battery life and works with input voltages as low as 2.7 volts."
HV816 is available in QFN-16 (HV816K6-G) and SOW-16 (HV816SG-G) packages. HV816SG-G has a heat slug for high power applications. Both packages are RoHS compliant.
Samples for HV816K6-G are available from stock. Samples for HV816SG-G will be available in 3-4 weeks. Lead-time for production quantities is 4-6 weeks ARO. Pricing is $2.07 each for HV816K6-G and $2.63 each for HV816SG-G in 1K quantities.
Vishay Intertechnology releases metal-core-based, cold white LED power modules
MALVERN, USA: Vishay Intertechnology Inc. announced two metal-core-based, cold white LED power modules, each assembled with 12, 24, or 36 high-brightness LEDs.
The new VLSL40xxA is designed for flexible use by utilizing optional special reflectors to adjust the modules' emission characteristics. The VLSL50xxA features a clear silicone lens for a butterfly-shaped radiation characteristic.
Optimized for illumination in streetlights, internal building lighting, tunnel lights, and general lighting applications, the VLSL40xxA and VLSL50xxA offer a color temperature range of 5000 K to 7000 K.
Both devices feature a shiny white surface and a metal-core, single-side PCB with a Cu thickness of less than 0.75 microns. Each module includes a conductive top layer with a minimum Cu of 18 microns and a 63 micron prepreg 1080 FR4 type isolation layer.
The VLSL40xxA is available with the VLSL-REFL01 reflector, which is composed of an Al-alloy material with a non-high-polished surface. By using different reflector combinations, the emission in one direction can be adjusted in a typical range of 120 to 55 degrees. The clear silicone lens of the VLSL50xxA allows for a 35 degree vertical and 60 degree horizontal angle of half intensity.
The VLSL40xxA and VLSL50xxA are based on InGaN technology and provide a maximum current of 700 mA. The LED modules feature standard solder mask material, and they offer luminous flux and color binning. The devices provide ESD withstand voltage up to 2 kV in accordance with JESD22-A114-B and comply with ROHS 2002/95/EC.
Samples and production quantities of the LED power modules are available now, with lead times of eight to 25 weeks for larger orders.
The new VLSL40xxA is designed for flexible use by utilizing optional special reflectors to adjust the modules' emission characteristics. The VLSL50xxA features a clear silicone lens for a butterfly-shaped radiation characteristic.
Optimized for illumination in streetlights, internal building lighting, tunnel lights, and general lighting applications, the VLSL40xxA and VLSL50xxA offer a color temperature range of 5000 K to 7000 K.
Both devices feature a shiny white surface and a metal-core, single-side PCB with a Cu thickness of less than 0.75 microns. Each module includes a conductive top layer with a minimum Cu of 18 microns and a 63 micron prepreg 1080 FR4 type isolation layer.
The VLSL40xxA is available with the VLSL-REFL01 reflector, which is composed of an Al-alloy material with a non-high-polished surface. By using different reflector combinations, the emission in one direction can be adjusted in a typical range of 120 to 55 degrees. The clear silicone lens of the VLSL50xxA allows for a 35 degree vertical and 60 degree horizontal angle of half intensity.
The VLSL40xxA and VLSL50xxA are based on InGaN technology and provide a maximum current of 700 mA. The LED modules feature standard solder mask material, and they offer luminous flux and color binning. The devices provide ESD withstand voltage up to 2 kV in accordance with JESD22-A114-B and comply with ROHS 2002/95/EC.
Samples and production quantities of the LED power modules are available now, with lead times of eight to 25 weeks for larger orders.
Friday, December 3, 2010
MOSFETs in patented SMD0.2 package drastically reduce system size and weight in HiRel space apps
EL SEGUNDO, USA: International Rectifier (IR) has introduced a family of hermetic radiation hardened (RAD-Hard) 100 V MOSFETs in a new compact, surface mount SMD0.2 package for space applications such as satellite bus power systems and payload power supplies.
IR’s new patented, hermetic, compact SMD0.2 package utilizing Aluminum Nitride (AlN) ceramic for enhanced thermal conductivity, is designed specifically for RAD-Hard MOSFETs and addresses the needs of power designers requiring reduced weight and system size. With a 0.3” x 0.2” x 0.1” (8mm x 5mm x 3mm) footprint weighing only 0.25 g, the SMD0.2 surface mount package is 50 percent smaller and 75 percent lighter compared to existing SMD0.5 packages while dissipating the same amount of power at around 23 W.
“This new family of devices combines IR’s heritage in RAD-Hard MOSFET technology with innovative patented packaging technology to help engineers meet the challenges of designing space applications that demand increasingly smaller, lighter, highly reliable system solutions," said Odile Ronat, discrete marketing manager, IR’s HiRel Business Unit.
The new MOSFETs utilize IR’s proven RAD-Hard MOSFET technology. Both 100 krad(Si) and 300 krad(Si) total dose rating are available, with SEE rating of 85MeV/(mg/cm2). Standard and logic level N-channel and P-channel devices are also available. Voltages other than 100 V are also available on request. The SMD0.2 package is available with either metal lid or ceramic lid.
IR’s new patented, hermetic, compact SMD0.2 package utilizing Aluminum Nitride (AlN) ceramic for enhanced thermal conductivity, is designed specifically for RAD-Hard MOSFETs and addresses the needs of power designers requiring reduced weight and system size. With a 0.3” x 0.2” x 0.1” (8mm x 5mm x 3mm) footprint weighing only 0.25 g, the SMD0.2 surface mount package is 50 percent smaller and 75 percent lighter compared to existing SMD0.5 packages while dissipating the same amount of power at around 23 W.
“This new family of devices combines IR’s heritage in RAD-Hard MOSFET technology with innovative patented packaging technology to help engineers meet the challenges of designing space applications that demand increasingly smaller, lighter, highly reliable system solutions," said Odile Ronat, discrete marketing manager, IR’s HiRel Business Unit.
The new MOSFETs utilize IR’s proven RAD-Hard MOSFET technology. Both 100 krad(Si) and 300 krad(Si) total dose rating are available, with SEE rating of 85MeV/(mg/cm2). Standard and logic level N-channel and P-channel devices are also available. Voltages other than 100 V are also available on request. The SMD0.2 package is available with either metal lid or ceramic lid.
SAFC Hitech facility expansion in Taiwan enhances global capacity for HB LED manufacturing
ST. LOUIS, USA: Following the March 2010 production expansion of trimethylgallium (TMG) at its Bromborough, UK manufacturing site, SAFC Hitech, a member of the Sigma-Aldrich Group, reinforced its commitment to the Asia-Pacific electronics markets by announcing plans to build a new, dedicated facility in Kaohsiung, Taiwan for transfilling, technical service and production of LED and silicon semiconductor precursors.
The new facility, expected to be operational by late 2011, will extend the Company's ability to serve the Asian market, leveraging the knowledge and capabilities developed at its existing Kaohsiung facility.
The new investment will transition current operations into a new environment that is expected to expand the Company's transfilling and technical service base, as well as add significant capacity for the dedicated manufacturing of high-quality precursors to support the burgeoning High Brightness LED (HBLED) market and ALD and CVD precursors for the silicon semiconductor market.
Increased focus on improving efficiency and reducing energy costs through technology and design advances is driving the electronics sector to roll out more 'energy-conscious' products and systems. Due to the resulting exponential rise in demand for LEDs, and in particular HBLEDs that are used in applications such as backlighting in flat panel television sets and energy efficient lighting, SAFC Hitech continues to strengthen its leading position as a legacy supplier of reliable precursors for the HBLED market.
"As mass manufacturing continues its rise, we are experiencing significant increases in customer and partnership activities in the Asia-Pacific region, which aligns nicely with our core commitment to driving global expansion in the production of precursors for the rapidly expanding HBLED market," said Philip Rose, SAFC Hitech president.
"The expansion of our Kaohsiung presence is a logical next step that will help us to support these markets. By increasing our investment in local technical service capabilities and by leveraging our proprietary technologies and capabilities, we are able to increase our transfilling, production and technical services in these key markets."
The existing SAFC Hitech Kaohsiung capabilities handle and characterize highly-specialized laboratory-scale chemicals and features a dedicated customer support center. This existing site is ISO 9001 certified for quality and ISO 14001 certified for safety and environmental protocols.
The facility was originally built to service the semiconductor industry demands for ultra-high quality precursors using proprietary technologies. The site also provides integrated inert atmosphere transfilling stations, state-of-the-art analytical instrumentation for the detection of ultra-low metallic and oxygen containing contaminants and dedicated cylinder preparation and packaging areas. An extensive departmental infrastructure (Health & Safety, quality, shipping, sales) provides for adherence to the highest standards of performance.
The new facility, expected to be operational by late 2011, will extend the Company's ability to serve the Asian market, leveraging the knowledge and capabilities developed at its existing Kaohsiung facility.
The new investment will transition current operations into a new environment that is expected to expand the Company's transfilling and technical service base, as well as add significant capacity for the dedicated manufacturing of high-quality precursors to support the burgeoning High Brightness LED (HBLED) market and ALD and CVD precursors for the silicon semiconductor market.
Increased focus on improving efficiency and reducing energy costs through technology and design advances is driving the electronics sector to roll out more 'energy-conscious' products and systems. Due to the resulting exponential rise in demand for LEDs, and in particular HBLEDs that are used in applications such as backlighting in flat panel television sets and energy efficient lighting, SAFC Hitech continues to strengthen its leading position as a legacy supplier of reliable precursors for the HBLED market.
"As mass manufacturing continues its rise, we are experiencing significant increases in customer and partnership activities in the Asia-Pacific region, which aligns nicely with our core commitment to driving global expansion in the production of precursors for the rapidly expanding HBLED market," said Philip Rose, SAFC Hitech president.
"The expansion of our Kaohsiung presence is a logical next step that will help us to support these markets. By increasing our investment in local technical service capabilities and by leveraging our proprietary technologies and capabilities, we are able to increase our transfilling, production and technical services in these key markets."
The existing SAFC Hitech Kaohsiung capabilities handle and characterize highly-specialized laboratory-scale chemicals and features a dedicated customer support center. This existing site is ISO 9001 certified for quality and ISO 14001 certified for safety and environmental protocols.
The facility was originally built to service the semiconductor industry demands for ultra-high quality precursors using proprietary technologies. The site also provides integrated inert atmosphere transfilling stations, state-of-the-art analytical instrumentation for the detection of ultra-low metallic and oxygen containing contaminants and dedicated cylinder preparation and packaging areas. An extensive departmental infrastructure (Health & Safety, quality, shipping, sales) provides for adherence to the highest standards of performance.
Vishay Intertechnology announces new $450 million credit facility
MALVERN, USA: Vishay Intertechnology Inc. announced that it has entered into a new five-year $450 million credit facility. The senior secured facility, which matures on December 1, 2015, replaces the Company’s prior $250 million revolving credit facility, which was scheduled to mature on April 20, 2012.
Borrowings under the new facility will bear interest at LIBOR plus an interest margin. The applicable interest margin is based on Vishay’s then current leverage ratio.
Based on Vishay’s current leverage ratio, borrowings bear interest at LIBOR plus 1.65 percent; Vishay is also required to pay a facility fee of 0.35 percent per annum on the entire commitment amount for a total borrowing cost, based on current leverage, of LIBOR plus 2 percent for the outstanding amount under the new credit facility.
The interest rate under the prior facility was at LIBOR plus 1.875 percent, plus a facility commitment fee of 0.35 percent per annum on the entire commitment amount for a total of LIBOR plus 2.225 percent for the outstanding amount.
The new facility also permits Vishay, upon satisfaction of certain conditions, to settle the principal amount of its 2.25 percent convertible senior notes in cash upon conversion, and settle any additional amounts in shares. The 2.25 percent convertible senior notes were issued on November 9, 2010.
Dr. Lior Yahalomi, Vishay’s CFO, said: “We are excited to capitalize on favorable credit market conditions and Vishay’s new level of business performance to obtain this five-year, $450 million credit facility at lower interest rates than we are currently paying. Combined with our strong operational performance and continued free cash generation, this facility will provide Vishay with financial flexibility to pursue our business strategy.”
JPMorgan Chase Bank. N.A. acted as administrative agent. J.P. Morgan Securities LLC acted as lead arranger and joint bookrunner. Comerica Bank and Bank Leumi USA served as joint bookrunners and co-syndication agents. The Bank of Tokyo-Mitsubishi UFJ, Ltd. and HSBC Bank USA, N.A. functioned as co-documentation agents.
Borrowings under the new facility will bear interest at LIBOR plus an interest margin. The applicable interest margin is based on Vishay’s then current leverage ratio.
Based on Vishay’s current leverage ratio, borrowings bear interest at LIBOR plus 1.65 percent; Vishay is also required to pay a facility fee of 0.35 percent per annum on the entire commitment amount for a total borrowing cost, based on current leverage, of LIBOR plus 2 percent for the outstanding amount under the new credit facility.
The interest rate under the prior facility was at LIBOR plus 1.875 percent, plus a facility commitment fee of 0.35 percent per annum on the entire commitment amount for a total of LIBOR plus 2.225 percent for the outstanding amount.
The new facility also permits Vishay, upon satisfaction of certain conditions, to settle the principal amount of its 2.25 percent convertible senior notes in cash upon conversion, and settle any additional amounts in shares. The 2.25 percent convertible senior notes were issued on November 9, 2010.
Dr. Lior Yahalomi, Vishay’s CFO, said: “We are excited to capitalize on favorable credit market conditions and Vishay’s new level of business performance to obtain this five-year, $450 million credit facility at lower interest rates than we are currently paying. Combined with our strong operational performance and continued free cash generation, this facility will provide Vishay with financial flexibility to pursue our business strategy.”
JPMorgan Chase Bank. N.A. acted as administrative agent. J.P. Morgan Securities LLC acted as lead arranger and joint bookrunner. Comerica Bank and Bank Leumi USA served as joint bookrunners and co-syndication agents. The Bank of Tokyo-Mitsubishi UFJ, Ltd. and HSBC Bank USA, N.A. functioned as co-documentation agents.
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