TOKYO, JAPAN: Mitsubishi Electric Corp. will launch two new models of indium gallium phosphide (InGaP) - heterojunction bipolar transistors (HBT) for reception systems in satellite digital radios.
These products have a 4-pin full-mold package, and are best used in the second or third stages of low noise amplifiers for L to C band (0.5~6GHz) applications. Shipments will begin on February 7, 2011.
Satellite digital audio radio service (SDARS), common in North America since 2001, does not require tuning to adapt to regional broadcasting like analog radio services. Car audio systems therefore use SDARS to access traffic information, entertainment programs and other information services.
Low noise amplifiers used in the reception systems of these satellite digital radios are composed of two or three stages. The first stage requires efficient low noise and high gain characteristics, and the second and third stages require high gain and high power characteristics.
Mitsubishi Electric will begin shipment of a new series of InGaP-HBTs including the MGF3021AM, which features high gain characteristics, and the MGF3022AM, which has high power characteristics. These amplifiers best operate in combination with the MGF4921AM, Mitsubishi Electric's low noise gallium arsenide (GaAs) high electron mobility transistor already available for the first stage of amplifying.
Subscribe to:
Post Comments (Atom)
No comments:
Post a Comment
Note: Only a member of this blog may post a comment.