Cree launches industry’s first surface mount 1200V silicon carbide Schottky diode

DURHAM, USA: Cree Inc. announced the availability of the industry’s first commercial 1200V surface mount SiC Schottky diode.

Packaged in an industry-standard surface mount TO-252 D-Pak, the Schottky diodes deliver the same proven performance as Cree’s TO-220 through-hole devices, with a smaller board footprint and lower profile. This can enable the design of smaller, lower cost, and more efficient solar power micro-inverters, compared to systems designed with larger and bulkier through-hole parts.

“Our customers designing high-efficiency micro-inverters for solar power applications wanted to simplify their designs without compromising system efficiency. They were looking for a surface mount device that could deliver the same performance they had come to expect from SiC Schottky diodes – zero reverse recovery losses, high frequency operation with a low EMI signature, and reduced operating temperatures,” explained Cengiz Balkas, Cree vice president and general manager, Power and RF.

“Given Cree’s experience in developing high-voltage SiC power devices, the move to the surface mount D-Pak was a natural extension of our Schottky diode product line to serve this critical market.”

Cree C2D05120E Schottky diodes are rated for 5A and 1200V, with approximate board mounted dimensions of 6.6mm wide x 9.9mm long x 2.3mm high. Operating junction and storage temperature is rated for -55°C to +175°C.

The C2D05120E surface mount Schottky diodes are fully qualified and released for production use.