TOKYO, JAPAN: Mitsubishi Electric Corp. has developed a new intelligent power module (IPM) and transfer molded power module (T-PM) mainly for electric and hybrid vehicle applications. Test samples shipments of four models of the J-Series IPM and two models of the J-Series T-PM will start June 21, 2011. Mass production is expected to begin in March 2013.
Power modules for automobiles offer even higher reliability than industrial-use modules due to the extremely high requirements for vehicle safety and durability. Mitsubishi Electric pioneered the mass production of power modules for hybrid vehicles in 1997, since which time the demand for these modules has grown in parallel with increasing concerns for the environment expanding global market for electric as well as hybrid vehicles.
J-series features
IPM promotes safety and high functionality
* Optimized IGBT drive & protection circuits and built-in photo-couplers for customer’s interface isolation.
* Vibration resistant connectors for reliable interface with customer designs.
* On-chip temperature sensor offers accurate analog output.
* Analog power-supply voltage output function monitors inverter DC-Link voltage (optional).
T-PM with increased electric power capacity
* Expanded T-PM lineup offers 300A/1200V and 600A/600V (max.) models.
- Rated capacity doubles that of existing CT300DJH060.
- Increased T-PM power capacity further contributes to inverter downsizing.
Automotive-grade quality and functionality
* TYPE-A package IPM for 30kW motors and TYPE-B package IPM and T-PM for 55kw motors (max. ratings may vary depending on customer application conditions).
* High-quality and reliability.
* Traceability for managing materials/components and entire production process for each product.
* Full compliance with End-of-Life-Vehicle Directive.
J-series T-PM
Original technologies for high reliability
* Transfer molded structure and company’s original direct lead bonding (DLB) structure.
* Power and temperature cycle lifespans 30 times longer than those of typical industrial power.
- Power cycle lifespan based on repetitive operation tests of energized chip, with rapid chip temperature change within range of between 50 and 100 degrees C.
- Temperature cycle lifespan based on repetitive operational tests of non-energized chip, with ambient temperature modulating within range of between -40 and 125 degrees C.
* DLB structure reduces module’s internal wiring resistance and inductance.
Subscribe to:
Post Comments (Atom)
No comments:
Post a Comment
Note: Only a member of this blog may post a comment.