IRVINE, USA: Toshiba America Electronic Components Inc. (TAEC) has announced a new range of power MOSFETs that combine the company's latest trench MOS process with its enhanced DPAK+ package technology. The new MOSFETs will significantly improve application performance while reducing PCB real estate and noise. The new products are ideally suited for a range of applications, including switching regulators, DC-DC converters and motor drives.
Toshiba's new MOSFET line-up comprises 11 n-channel devices that offer a choice of maximum voltage ratings of 40V, 60V and 100V, and ten p-channel parts with maximum voltage ratings of -40V and -60V. Current ratings range from +8A to +80A depending on the device chosen. All of the MOSFETs are designed to operate in environments with channel temperatures of up to 175 degrees Celsius.
The DPAK+ package has the same form factor as, and is pin-to-pin compatible with, conventional DPAK packages. However, its proprietary internal design reduces resistance and thermal losses and ensures improved efficiency, current handling and reliability when compared with conventional DPAK alternatives.
Based on Toshiba's proven 'WARP' technology, DPAK+ replaces conventional internal aluminum bondwires between the MOSFET die and the package leads with wider copper clamps. The clamping mechanism maintains a highly reliable mechanical connection capable of withstanding repeated power cycling as well as exposure to shock and vibration.
In addition, the larger cross-sectional area, combined with higher electrical connectivity, minimizes I(2)R heating due to package losses and also reduces package inductance. This, in turn, contributes to heat reduction, lower noise and faster device operation.
MOSFETs in the new DPAK+ family have low leakage currents and ultra-low resistances, as low as 2.4 milliohms (typical, V(GS) = 10V). Typical thermal resistance between channel and case is only 1.5 degrees Celsius/W, while power dissipation at 25 degrees Celsius is just 100W.
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