Cree intros 150-mm 4HN SiC epitaxial wafers

DURHAM, USA: Cree Inc. announced the availability of high quality, low micropipe 150-mm 4H n-type silicon carbide (SiC) epitaxial wafers. Cree continues to lead the SiC materials marketplace in driving to larger diameters and this latest advancement lowers device cost and enables adoption for customers with existing 150-mm diameter device processing lines. 150-mm epitaxial wafers with highly uniform epitaxial layers as thick as 100 microns are available for immediate purchase.

SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including light-emitting diodes (LEDs), power switching devices and RF power transistors for wireless communications. 150-mm diameter single crystal SiC substrates enable cost reductions and increased throughput, while bolstering the continued growth of the SiC industry.

“Cree’s ability to deliver high volumes of 100-mm epitaxial wafers is unrivaled in the SiC industry and our latest 150-mm technology continues to raise the standards for SiC wafers,” said Dr. Vijay Balakrishna, Cree materials product manager. “Our vertically integrated approach assures customers of a complete solution for high quality 150-mm SiC epitaxial wafers, providing industry leaders within the power electronics market the stable supply they demand.”

150-mm 4H n-type SiC epitaxial wafers are available for immediate purchase in limited quantities.