JAPAN: Toshiba Corp. has launched a low-ON-resistance, low-leakage power MOSFET using the latest trench MOS process as an addition to the MOSFET lineup for automotive applications.
The new product, "TK100S04N1L", achieves low ON-resistance with a combination of the latest 8th generation trench MOS process "U-MOS VIII-H series" chip and the "DPAK+" package that utilizes Cu (copper) connectors. The product is primarily suited for automotive applications, especially for those demanding high-speed switching, such as motor drives and switching regulators.
Samples are available now with mass production scheduled to start in March 2013.
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