Cree demos 120W and 180W high-efficiency GaN HEMT amplifiers

DURHAM, USA: Cree Inc. announced demonstrations of its latest broadband GaN HEMT transistors (the CGH40120F and CGH40180PP) at the 2009 IEEE/MTT-S International Microwave Symposium being held this week in Boston.

The demonstration amplifiers feature high efficiency and high power under continuous-wave (CW) operation, with typical power-added efficiencies (PAE) of 70 percent at saturated powers of 120W for the CGH40120F and 180W for the CGH40180PP in class A/B demonstration amplifiers.

"A number of very-high-efficiency amplifier architectures, routinely used at lower frequencies for audio and UHF applications, are being realized at much higher RF and microwave frequencies using GaN transistors," said Jim Milligan, Cree director for RF and microwave products.

"Published research indicates greater than 80 percent PAE using Class D, E, F and J amplifier architectures, with Cree GaN HEMT transistors, at frequencies over 2 GHz. More-typical Class A/B operation can also offer exceptional efficiency, validated by the demonstrations we are giving this week. Cree GaN transistors offer system designers a wide range of choices, supporting diverse application requirements."

The CGH40120F and CGH40180F are the newest members of Cree's general-purpose transistor product family. Samples and fixtures are available through Digi-Key. Large-signal models for Agilent's ADS or AWR's MWO simulators are available directly from Cree.