Toshiba adds small signal P-channel MOSFETs for load switching in mobile handsets and portable electronics

IRVINE, USA: Toshiba America Electronic Components Inc., (TAEC) has expanded its lineup of P-channel power MOSFETs for load switching with a next-generation selection of low voltage, 1.5V operation devices with lower On-Resistance (R(DS)(ON)) for applications with current ranging from 1.0A to 5.0A. Typical applications are mobile handsets, digital cameras, portable audio players and other portable electronic devices.

The new lineup includes five high speed switching power MOSFETs with -20V drain source voltage (V(DSS)) to provide designers with a choice of On-Resistance (R(DS)(ON)), input capacitance, and packaging. The family is offered three different small thin packages: 3-pin TSM (2.9 x 2.8 x 0.7mm), 6-pin UF6 (2.0 x 2.1 x 0.7mm), and 3-pin UFM (2.0 x 2.1 x 0.7mm).

"As system power supplies for mobile handset components such as baseband ICs move toward lower voltage and power, there is an increasing need for low R(DS)(ON) MOSFETs," said Talayeh Saderi, business development engineer, RF and small signal devices, for TAEC.

New devices in TSM packages include the SSM3J307T, which features R(DS)(ON) of 83mohm (max.) at V(GS) = -1.5V or 40mohm at -2.5V, with input capacitance of 1170 pF(1); and the SSM3J321T with R(DS)(ON) of 137mohm (max.) at V(GS) = -1.5V and 62mohm at -2.5V, with input capacitance of 640 pF(1). For comparison, the previous generation SSM3J13T, a -12V(DSS) device, features R(DS)(ON) of 95mohm (max.) at V(GS) = -2.5V, with input capacitance of 890pF(1).

Another new MOSFET in UF6 packaging, the SSM6J409TU, features R(DS)(ON) of 72.3 mohm (max.) at V(GS) = -1.5V and 30.2 mohm at -2.5V, with input capacitance of 1100 pF(1). Its predecessor, the SSM6J51TU, features R(DS)(ON) of 150mohm (max.) at V(GS) = -1.5V, and input capacitance of 1700 pF(1).

Two new MOSFETs in UFM packaging are the SSM3J130TU, a -20V(DSS) device with R(DS)(ON) of 63.2 mohm (max.) at V(GS) = -1.5V and 41.1 mohm at -2.5V, with input capacitance of 1800 pF(1) and the SSM3J129TU, a -20V(DSS) device with R(DS)(ON) of 137mohm (max.) at V(GS) = -1.5V and 80 mohm at -2.5V, with input capacitance of 640 pF(1). For comparison, the previous generation SSM3J120TU features R(DS)(ON) of 140mohm (max.) at V(GS) = -1.5V and input capacitance of 1484 pF(1).