IXYS intros new 900V rugged and fast polar series power MOSFETs

BIEL, SWITZERLAND & MILPITAS, USA: IXYS Corp. has announced new 900V additions to its comprehensive Polar HiPerFET Power MOSFET product portfolio.

Available with drain current ratings from 10.5 Amperes to 56 Amperes, these new 900V additions complement IXYS’ high-voltage Polar HiPerFETTM MOSFET product line (available from 500V to 1200V), providing the end customer a broader selection range of robust, energy efficient high-voltage MOSFET solutions to choose from.

These new 900V devices combine advantages derived from IXYS’ Polar Technology platform and HiPerFETTM process to provide improved power efficiency and reliability in today’s demanding high-voltage conversion systems that require bus voltage operation of up to 700V.

IXYS’ Polar Technology platform has been especially tailored to minimize on-state resistance while maintaining a low gate charge. This results in a substantial reduction in conduction and switching losses of the device. Lower thermal impedances are also achieved, increasing the total power density capability of these devices.

Power switching capabilities and device ruggedness are further enhanced with a fast intrinsic diode with low reverse recovery charge (Qrr) and improved turn-off dV/dt immunity. The improved turn-off dV/dt immunity offer significant safety margins for the stresses encountered in high-voltage switching applications.

These combined device attributes allow for improved efficient topologies in hard-switching inverters, switch-mode/resonant-mode power supplies, high voltage lighting, AC/DC motor drives, robotics/servo controls, industrial machinery and active power factor correction circuits.

IXYS offers a full range of discrete standard thru-hole and surface mount packages for these new Polar HiPerFETTM additions. Versions are also offered in IXYS proprietary ISOPLUS packages, providing UL recognized 2500V isolation with superior thermal cycling and thermal performance.