DALLAS, USA: Diodes Inc., a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, has introduced a synchronous MOSFET controller for driving a MOSFET in place of a Schottky diode in the secondary side of flyback and resonant converters.
Designed to maximize circuit efficiency and help achieve Energy Star product ratings, ZXGD3103N8 enables designers to reduce rectifier losses by up to 70 percent and increase power supply efficiency by up to 3.5 percent.
Comprising a differential amplifier detector and high current driver, the ZXGD3103N8 monitors MOSFET reverse voltage and applies a positive turn-on voltage to the gate if body diode conduction is detected. Being proportional to the MOSFET drain-source reverse voltage, the gate-drive voltage can guard against premature turn-off of the MOSFET; thereby, maximizing circuit efficiency.
To further improve efficiency, the MOSFET controller’s low detector threshold voltage, typically 10mV, means that body diode conduction is kept to an absolute minimum. In addition, very fast turn-off propagation and fall times, respectively 15ns and 20ns, ensure shoot-through or reverse current conduction is minimized, helping to maximize power supply circuit efficiency.
With its wide operating voltage range, the SO8 packaged ZXGD3103N8 can be powered directly from supply rails between 5V and 15V or higher via external regulator. Its ability to block drain voltages up to 180V means no external clamping circuit is required, and its low standby current, typically 5mA, enables compliance with the Energy Star standby rating.
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