IXYS launches new PolarP2 power MOSFET family

MILPITAS, USA & BIEL, SWITZERLAND: IXYS Corp. has released its new PolarP2 Power MOSFET family, IXYS’ latest generation of fast and rugged Polar-Series Power MOSFETs.

These new 500V devices are manufactured using IXYS’ proprietary PolarP2TM Technology Platform, yielding a new class of devices that feature an optimized combination of low on-state resistance and gate charge, delivering a FOM (Figure of Merit: Rdson x Qg) as low as 12Ohm/nanocoulombs.

The superior performance and energy savings of these devices enable the development of more efficient power subsystems in applications such as high frequency inverters in power conversion and solar energy generation.

These devices are also ideal for switch/resonant-mode power supplies and UPS’s for telecom, base stations, servers and server farms and energy efficient consumer appliances. Other applications that will benefit from these new devices include power factor correction circuits, motor drives, lamp ballasts, laser drivers, DC-DC converters, robotics and servo control.

The newly introduced PolarP2 Power MOSFET Family consist of two subclasses, presenting end-customers greater system design flexibility and the opportunity to select a device with the best combination of performance and cost. These subclasses include the cost-effective PolarP2 Standard and the high-performance PolarP2 HiPerFET.

PolarP2 Standard versions are available with drain current ratings of 16, 25, 42, and 52 Amperes. They feature an excellent performance per price ratio presenting designers with a cost-effective solution to load switching designs. These new standard versions demonstrate up to a 20 percent reduction in on-state resistance (Rdson) while maintaining low gate charge (Qg) values compared to previous generations. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients.

PolarP2 HiPerFET versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2 Standard versions with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr of no greater than 250ns).

The featured fast intrinsic body diode properties of these HiPerFET versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies.

The superior ruggedness and power switching capabilities of these HiPerFET devices make them ideal device selections particularly in popular zero voltage switching (ZVS) topologies where body diode reverse recovery characteristics are critical.

Part number examples from the cost-effective PolarP2 Standard subclass include the IXTH450P2, IXTP450P2, IXTQ450P2, IXTQ460P2, and IXTQ470P2. Part number examples from the high-performance PolarP2 HiPerFETTM subclass include the IXFH42N50P2, IXFT52N50P2, IXFK74N50P2, IXFX94N50P2, and IXFB120N50P2.