Mitsubishi Electric to launch GaN HEMTs for L to C band amplifiers

TOKYO, JAPAN: Mitsubishi Electric Corp. has developed three models of gallium nitride (GaN) high electron mobility transistors (HEMTs) with 10W, 20W and 40W outputs.

The three models are for L to C band (0.5~6 GHz) amplifiers, which are incorporated into base stations for mobile phones, very small aperture terminals and other transmission equipment. Sample shipments will begin from August 2010.

For microwave transmitters, gallium arsenide (GaAs) power amplifiers are most commonly used, but gallium nitride is now garnering more attention, owing to its high breakdown voltage and high saturated electron speed.

In March 2010, Mitsubishi Electric became the first company in the world to manufacture GaN HEMTs, launching four models for C-band space applications. HEMTs that use GaN have higher power density, which helps save energy and contributes to making transmitters more compact and lightweight, and expanded operating life.