MALVERN, USA: Vishay Intertechnology Inc. has released a new 600 V, 47 A n-channel power MOSFET with ultra-low maximum on-resistance of 0.07 ohms at a 10 V gate drive and an improved gate charge of 216 nC in the TO-247 package.
The SiHG47N60S's 15.12 ohms-nanocoulombs gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is the industry's lowest for this device type.
The low on-resistance of the SiHG47N60S translates into lower conduction losses that save energy in inverter circuits and pulsewidth modulation (PWM) full-bridge topologies in solar and wind inverters, and in telecom, server, and motor control power applications.
The new SiHG47N60S is produced using Vishay Super Junction technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. The MOSFET is compliant to RoHS Directive 2002/95/EC and 100 percent avalanche tested for reliable operation.
Samples and production quantities of the new power MOSFET are available now, with lead times of 10 to 12 weeks for larger orders.
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