Cree technology breakthrough enables 50 Amp silicon carbide power devices

DURHAM, USA: In a breakthrough that redefines performance and energy efficiency in high-power applications, Cree Inc. announced a new family of 50A Silicon Carbide (SiC) devices, including the industry’s first 1700V Z-FET SiC MOSFET.

These new 50A SiC devices, which also include a 1200V Z-FET SiC MOSFET and three Z-Rec SiC Schottky diodes, will enable a new generation of power systems with record-setting energy efficiency and lower cost of ownership than with conventional technologies.

The new devices, available in die form, are designed for high-power modules for applications such as solar power inverters, uninterruptible power supply (UPS) equipment and motor drives. Using the Cree SiC 50A devices, power electronics engineers can set new standards for system cost of ownership through reduced size, lower-cost bill of materials (BOM), and improved efficiency.

“Only Cree has the relentless innovation and expertise across SiC materials technology, wafer processing and device design to make this kind of technology possible,” said Cengiz Balkas, VP and GM, Cree power and RF. “These larger die extend the benefits realized with our 20 Amp SiC MOSFETs to power applications up to 500 kW, making it possible to replace less capable conventional silicon IGBTs in high-power, high-voltage applications.”

These higher-rated SiC devices continue a long history of Cree SiC technology innovation firsts, including the industry’s first 1200V SiC MOSFET and the first production 1200V and 1700V SiC Schottky diodes.

The comprehensive 50A SiC device series includes a 40 mOhm 1700V MOSFET, a 25 mOhm 1200V MOSFET and 50A/1700V, 50A/1200V, and 50A 650V Schottky diodes. Samples of all these high-power devices are available immediately, with production volumes targeted for fall 2012. Preliminary datasheets are available upon request for samples in die form.