Cree announces sample availability of two new GaN HEMT transistors

DURHAM, USA: Cree Inc. announced the sample release of two new GaN HEMT transistors, expanding the power range and addressable applications of the Cree product family.

The CGH40006P is a 6-Watt GaN HEMT transistor covering a frequency range of DC through 6 GHz. This transistor is ideal for driver and medium power stages within broadband amplifier topologies. In addition, it can be used in low-noise amplifier applications where the superior ruggedness of GaN HEMTs can lessen the need for protection components, typically required in GaAs MESFET low-noise amplifiers.

A demonstration amplifier using the new transistor, at 28 volts operating voltage, provided a 2 to 6 GHz instantaneous bandwidth achieving 12 dB average small signal gain and 8 Watts typical saturated output power at greater than 50 percent drain efficiency over the entire band.

Cree has also introduced the CGH31240F, which is a high-power, class A/B S-Band GaN HEMT transistor. It is an internally-matched 240W packaged device for the 2.7 to 3.1 GHz band. It is designed for civil radar applications such as weather and air traffic control, as well as for marine radar. The CGH31240F, operating at 28V, offers over 10dB power gain while providing over 240 Watts saturated power with greater than 50 percent power added efficiency using a 300 microsecond, 10 percent duty cycle pulsed signal.

“The CGH40006P and CGH31240F are important new products which reflect our road map of GaN HEMT transistors and MMICs that offer higher power, bandwidth and ruggedness than conventional technologies such as GaAs and Si,” said Tom Dekker, Cree director of sales and marketing for RF Products.