Cree's advanced Z-Rec silicon-carbide power diodes

DURHAM, USA: Cree Inc., the market leader in Silicon Carbide (SiC) power products, announced availability of its world-class 600V SiC Junction Barrier Schottky (JBS) diodes.

The new Z-Rec diodes provide improved device power efficiency and enhanced surge current capability, allowing system optimization for performance and cost in power conversion applications ranging from 250W to 1500W.

Primarily used for boost diode applications in power factor correction (PFC) circuits, Z-Rec SiC JBS diodes, through their inherent lack of reverse-recovery currents, will reduce AC-DC power supply losses by up to 10 percent versus silicon fast-recovery diodes.

Zero reverse-recovery current has been an advantage for Cree's SiC-diode customers, enabling switch-mode power supplies to reach and exceed ENERGY STAR(r), 80-plus certification levels. The new Z-Rec devices add to already impressive SiC-diode power savings through device junction capacitance values, which are up to 10 percent lower than Cree's first-generation devices.

The lower junction capacitance reduces switching losses and extends the power savings to systems operating at higher switching frequencies. Each new device, of a given current rating, maintains the low Vf (<1.8V) of previous Cree SiC diodes at rated current and temperature, resulting in no compromise in conduction losses.

The ability to sustain repetitive and non-repetitive surge currents has long been a limitation when designing-in SiC JBS diodes. Early-generation SiC diodes often required the designer to choose a device with a higher-than-required current rating to assure robust and reliable operation under potential surge conditions.

Cree's advancements in SiC power-device structures and design allow the new Z-Rec diodes to provide optimal efficiency with use of the minimum-required current-rated device. Z-Rec diode's performance and application cost advantages support "green" energy efficiency in an expanding number of power-supply designs for server, PC, communications, industrial and consumer switch-mode power supplies.

"SiC power diodes are rapidly becoming a standard component, replacing their silicon predecessors for applications in which efficiency, switching speed and reliability are prerequisites. Cree's leadership in SiC materials technology and SiC power-device design provide power-system designers the best zero-recovery diode on the market today," said Dr. Cengiz Balkas, Cree vice president and general manager, power and RF.

Z-Rec 600V devices are available in 2, 3, 4, 6, 8, 10 and 20 amp ratings in TO-220-2, TO-220-2 fully molded (Full-Pack), TO-247-3, TO-252-2 (D-Pak), and TO-263-2 (D2Pak) packages.

All Z-Rec devices are RoHS, REACH, and Halogen-Free-compliant. Samples and production quantities are now available with standard lead times (with 3A devices available after July 2009).