SAN JOSE, USA: Fairchild Semiconductor brings designers of power supplies, lighting, display and industrial applications a new generation of 600V Super-Junction MOSFETs -SupreMOS.
The combination of their low RDS (ON) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild’s 600V SuperFET MOSFETs. These devices, the 165-milliohm-maximum FCP22N60N, FCPF22N60NT and FCA22N60N, and the 199-milliohm-maximum FCP16N60N and FCPF16N60NT offer best-in-class reverse recovery characteristics di/dt and dv/dt bringing higher reliability for resonant converter, LLC and phase-shifted full-bridge topologies found in switch mode power supply (SMPS) designs.
Compared to SuperFET MOSFETs, these 600V Super-Junction MOSFETs offer a low gate charge for the same RDS(ON), offering excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.
They provide low input and output capacitances, improving efficiency at light load conditions. These features enable power supplies to meet ENERGY STAR 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.
These products are part of Fairchild’s comprehensive portfolio of MOSFETs that offer designers a wide range of breakdown voltages (-500V to 1000V), state-of-the-art packaging and industry-leading FOM to deliver efficient power management anywhere electronic power conversion is needed.
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