SAN JOSE, USA: Fairchild Semiconductor brings designers of servers, blade servers and routers the industry’s first sub-one mOhm 30V MOSFET in a Power 56 package.
This 30V MOSFET, the FDMS7650, functions as a load switch or an ORing FET. In server farms, these ORing FETs are used when many power supplies are arranged in parallel to share the load. Dissipating less power and delivering higher efficiency is critical for the overall efficiency of these server farms because the FETs are continually on.
The FDMS7650 is the first in Power56 packaging to break the 1mOhm barrier with a MAX RDS(ON) of only 0.99mOhm, reducing conduction losses and improving the overall efficiency of the application. This 30V MOSFET can deliver the same total RDS(ON) with half the number of FETs. As an example, in a typical application using 2.0mOhm MOSFETs, the solution would require twice the number of FETs.
The FDMS7650 is able to achieve this groundbreaking RDS(ON) through Fairchild's advanced-performance PowerTrench® MOSFET technology. This technology yields an exceptionally low RDS(ON), total gate charge (QG) and Miller Charge (QGD) – enhancements that result in high efficiency by minimizing conduction and switching losses.
This power MOSFET is one of Fairchild’s many MOSFETs that offer compelling advantages in power designs. Good examples are Fairchild’s 30V Dual N-Channel MOSFETs, the FDMC8200 and FDMS9600. The FDMC8200 typically features an RDS(ON) of 24mOhm on the high side and 9.5mOhm on the low side, enhancing efficiency in DC-DC applications.
The FDMS9600 offers synchronous Buck applications, an optimal power stage through low switching losses on the high side MOSFET and low conduction losses on the low side SyncFET MOSFET.
Showing posts with label MOSFETs. Show all posts
Showing posts with label MOSFETs. Show all posts
Friday, September 4, 2009
Wednesday, August 26, 2009
Fairchild launches new generation of super-junction MOSFETs
SAN JOSE, USA: Fairchild Semiconductor brings designers of power supplies, lighting, display and industrial applications a new generation of 600V Super-Junction MOSFETs -SupreMOS.
The combination of their low RDS (ON) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild’s 600V SuperFET MOSFETs. These devices, the 165-milliohm-maximum FCP22N60N, FCPF22N60NT and FCA22N60N, and the 199-milliohm-maximum FCP16N60N and FCPF16N60NT offer best-in-class reverse recovery characteristics di/dt and dv/dt bringing higher reliability for resonant converter, LLC and phase-shifted full-bridge topologies found in switch mode power supply (SMPS) designs.
Compared to SuperFET MOSFETs, these 600V Super-Junction MOSFETs offer a low gate charge for the same RDS(ON), offering excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.
They provide low input and output capacitances, improving efficiency at light load conditions. These features enable power supplies to meet ENERGY STAR 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.
These products are part of Fairchild’s comprehensive portfolio of MOSFETs that offer designers a wide range of breakdown voltages (-500V to 1000V), state-of-the-art packaging and industry-leading FOM to deliver efficient power management anywhere electronic power conversion is needed.
The combination of their low RDS (ON) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild’s 600V SuperFET MOSFETs. These devices, the 165-milliohm-maximum FCP22N60N, FCPF22N60NT and FCA22N60N, and the 199-milliohm-maximum FCP16N60N and FCPF16N60NT offer best-in-class reverse recovery characteristics di/dt and dv/dt bringing higher reliability for resonant converter, LLC and phase-shifted full-bridge topologies found in switch mode power supply (SMPS) designs.
Compared to SuperFET MOSFETs, these 600V Super-Junction MOSFETs offer a low gate charge for the same RDS(ON), offering excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.
They provide low input and output capacitances, improving efficiency at light load conditions. These features enable power supplies to meet ENERGY STAR 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.
These products are part of Fairchild’s comprehensive portfolio of MOSFETs that offer designers a wide range of breakdown voltages (-500V to 1000V), state-of-the-art packaging and industry-leading FOM to deliver efficient power management anywhere electronic power conversion is needed.
Wednesday, August 19, 2009
Fairchild intros lowest RDS(ON) 20V P-channel MOSFET
SAN JOSE, USA: Fairchild Semiconductor brings designers of cell phones, medical, portable and consumer applications the industry’s lowest RDS(ON) (75mΩ at -4.5V) 20V P-channel MOSFET in a 1mm x 1mm WL-CSP package.
The FDZ371PZ is designed with Fairchild’s proprietary PowerTrench process technology. This technology yields an exceptionally low RDS(ON), minimizing conduction losses. Through these lower losses, the FDZ371PZ improves efficiency and extends battery life for portable designs. It also provides robust ESD protection of 4.4kV to protect against adverse ESD events.
The FDZ371PZ’s WL-CSP package utilizes 4 x 250µm lead-free solder balls, providing excellent electrical and thermal resistance values. Package height, when mounted, is an industry-leading 0.4mm.
The FDZ371PZ is part of a comprehensive portfolio of advanced MOSFETs that answer the industry’s need for compact, low-profile MOSFETs, offering high efficiency and excellent switching performance.
The price (each, 1k pcs.) is $0.30, and samples are now available. Delivery takes eight to 12 weeks.
The FDZ371PZ is designed with Fairchild’s proprietary PowerTrench process technology. This technology yields an exceptionally low RDS(ON), minimizing conduction losses. Through these lower losses, the FDZ371PZ improves efficiency and extends battery life for portable designs. It also provides robust ESD protection of 4.4kV to protect against adverse ESD events.
The FDZ371PZ’s WL-CSP package utilizes 4 x 250µm lead-free solder balls, providing excellent electrical and thermal resistance values. Package height, when mounted, is an industry-leading 0.4mm.
The FDZ371PZ is part of a comprehensive portfolio of advanced MOSFETs that answer the industry’s need for compact, low-profile MOSFETs, offering high efficiency and excellent switching performance.
The price (each, 1k pcs.) is $0.30, and samples are now available. Delivery takes eight to 12 weeks.
Friday, August 14, 2009
IR intros 150V and 200V power MOSFETs
EL SEGUNDO, USA: International Rectifier (IR), a leader in power management technology, has introduced a series of 150V and 200V HEXFET power MOSFETs with ultra low gate charge (Qg) for industrial applications including SMPS, UPS, inverters and DC motor drives.
IR’s 150V MOSFETs offer up to 59 percent lower total gate charge than competing devices while the new 200V MOSFETs feature up to 33 percent lower total gate charge than competing devices.
"As DC-DC power converter applications advance and switching frequencies increase, input capacitance and gate charge play a significant role in overall efficiency.
"IR's new 150V and 200V MOSFETs are optimized for fast switching circuits where switching losses are critical, and, therefore, are well suited as a primary switch for isolated DC-DC converters for telecom applications or driving light load efficiency in any advanced DC-DC application," said Brian LaValle, marketing manager for IR’s Power Management Devices Business Unit.
The new MOSFETs are qualified to industrial grade and are moisture sensitivity level 1 (MSL1). The devices are available in TO220, D2PAK, TO262, DPAK and IPAK packages, offered lead free and are RoHS compliant.
The devices are available immediately. Pricing begins at $0.83 each and $0.82 each for the IRFB4615PBF and IRFB4620PBF, respectively in 10,000-unit quantities. Prices are subject to change.
IR’s 150V MOSFETs offer up to 59 percent lower total gate charge than competing devices while the new 200V MOSFETs feature up to 33 percent lower total gate charge than competing devices.
"As DC-DC power converter applications advance and switching frequencies increase, input capacitance and gate charge play a significant role in overall efficiency.
"IR's new 150V and 200V MOSFETs are optimized for fast switching circuits where switching losses are critical, and, therefore, are well suited as a primary switch for isolated DC-DC converters for telecom applications or driving light load efficiency in any advanced DC-DC application," said Brian LaValle, marketing manager for IR’s Power Management Devices Business Unit.
The new MOSFETs are qualified to industrial grade and are moisture sensitivity level 1 (MSL1). The devices are available in TO220, D2PAK, TO262, DPAK and IPAK packages, offered lead free and are RoHS compliant.
The devices are available immediately. Pricing begins at $0.83 each and $0.82 each for the IRFB4615PBF and IRFB4620PBF, respectively in 10,000-unit quantities. Prices are subject to change.
Wednesday, July 22, 2009
Diodes Inc. intros 15 MOSFETs for LCD TV and monitor backlighting markets
DALLAS, USA: Diodes Inc. a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete and analog semiconductor markets, has expanded its broad MOSFET offering with the introduction of 15 new devices designed specifically for LCD TV and monitor backlighting markets.
Provided in industry standard TO252 and SO8 packaging, these MOSFET devices deliver the high-power handling and fast switching that are required by high efficiency Cold Cathode Fluorescent Lamp (CCFL) drive architectures.
The 30V rated, SO8 packaged dual n-channel DMN3024LSD suits push-pull inverters and offers a space saving advantage over discrete component alternatives. In full and half bridge topologies requiring complementary pairs, the DMC3028LSD provides an integrated high performance n- and p-channel MOSFET combination.
The extended TO252 MOSFET product family meets the higher power handling requirements with optimized on-resistance and gate charge performance for backlighting applications with multiple lamps.
These 12 new TO252 MOSFETs consist of nine n-channel and three p-channel parts, covering the drain-source voltage, which ranges from 20V to 60V.
Provided in industry standard TO252 and SO8 packaging, these MOSFET devices deliver the high-power handling and fast switching that are required by high efficiency Cold Cathode Fluorescent Lamp (CCFL) drive architectures.
The 30V rated, SO8 packaged dual n-channel DMN3024LSD suits push-pull inverters and offers a space saving advantage over discrete component alternatives. In full and half bridge topologies requiring complementary pairs, the DMC3028LSD provides an integrated high performance n- and p-channel MOSFET combination.
The extended TO252 MOSFET product family meets the higher power handling requirements with optimized on-resistance and gate charge performance for backlighting applications with multiple lamps.
These 12 new TO252 MOSFETs consist of nine n-channel and three p-channel parts, covering the drain-source voltage, which ranges from 20V to 60V.
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