DURHAM, USA: Providing RF and microwave design engineers with the opportunity to see firsthand the latest developments in GaN MMIC technology, Cree, Inc. (NASDAQ: CREE) today announced plans to demonstrate a variety of new GaN HEMT RF packaged amplifier and switch products at the IEEE MTT-S International Microwave Symposium (Booth #836) to be held in the Anaheim Convention Center May 25 through May 27, 2010.
The products to be demonstrated include a SPDT MMIC switch (300 MHz to 3 GHz); a 25 W MMIC power amplifier (10 MHz to 6 GHz); a 75 W MMIC power amplifier (2.7 to 3.5 GHz); and a 240 W transistor (2.9 to 3.5 GHz).
“We are pleased to preview our new packaged products, targeted for release later this year. We have been actively expanding our GaN MMIC and high power discrete product lines over the last twelve months to include higher power, higher efficiency amplifiers, as well as the recent introduction of high dynamic range GaN switch and our low noise amplifier (LNA) MMIC products, which we believe can further extend the advantages of GaN for commercial and military systems,” explained Jim Milligan, Cree, director of RF & Microwave Products.
“These product demonstrations are designed to show the benefits of Cree GaN to hardware design engineers seeking ways to improve system level output power, bandwidth and dynamic range beyond what can be achieved with traditional GaAs or silicon LDMOS solutions. They will also have access to our product development engineers to answer questions regarding specific implementation and advantages of these next generation products,” Milligan added.
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