ANAHEIM, USA: Toshiba America Electronic Components Inc. (TAEC) and its parent company, Toshiba Corp., announced the expansion of their Ku-Band gallium arsenide field effect transistor (GaAs FETs) lineup with two higher output power devices rated for 18 and 30 watts (W).
The new power amplifier GaAs FETs will be shown in TAEC's booth, #813, at the 2010 IEEE MTT-S International Microwave Symposium, which will be held May 25 through May 27 in Anaheim, California.
The new GaAs FETs, TIM1213-18L and TIM1213-30L, operate in the 12.7 to 13.2 GHz(1) range, and are targeted for use in microwave radios for microwave links and satellite communications. Other current Toshiba GaAs FETs in this frequency range feature 2W, 4W, 8W, 10W and 15W power output ratings.
The TIM1213-18L has output power at 1dB gain compression point (P1dB) of 42.5dBm (typ.), power gain at 1dB gain compression point (G1dB) of 6.0dB (typ.) and power efficiency of 28 percent. The TIM1213-30L features P1dB of 45.0dBm (typ.), G1dB of 5.5dB (typ.) and power added efficiency of 23 percent.
Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, in TAEC's Discrete Business Unit, said, "Continuing our long tradition of developing higher power amplifiers as technology advances, Toshiba is expanding our Ku-Band product family with these new devices to enable our customers to design more powerful and linear microwave radios with fewer components."
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