IRVINE, USA: Microsemi Corp. has announced a new high efficiency, high power IGBT (Insulated Gate Bipolar Transistor) based on its latest MOS 8 TM technology platform.
The new IGBT has been optimized for lower frequency operation (10KHz – 30KHz) where conduction loss dominates overall system losses. Target end applications include solar inverters, high performance SMPS, and industrial equipment such as welders, battery chargers, and induction heating equipment.
The APT44GA60BD30C also incorporates Microsemi's ultra fast reverse recovery DQ diode as an anti-parallel free wheeling diode.
Key features:
Punch Through Technology
Fast switching
High efficiency – low saturation voltage for low conduction losses
Short tail – minimizing switching losses
Low 1.5V saturation voltage.
"Optimization of individual device parameters -- such as the lower saturation voltage of our new IGBT -- can be leveraged by designers to make dramatic improvements to overall system performance and efficiency," said Philip Zuk, Product Marketing Manager for Microsemi's Power Products Group. "In this way, power semiconductors play a key, and often under-rated, role in perfecting electrical system designs."
Microsemi's Power MOS8 PT IGBT portfolio already provides low conduction loss options at 2.0 volts and 2.5 volts. The new APT44GA60BD30C reduces this to 1.5volts, enabling further increases in overall system efficiency for 600V designs. Input is rated at 44amps, with 38A maximums recommended at 10KHz and 27A at 30KHz.
The new IGBT is available in a choice of standard TO-247 and TO-268 packages, priced at $4.53 in 1,000-piece quantities.
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