Cree’s GaN HEMT MMIC power amplifiers expand frequency range through X-Band

DURHAM, USA: Providing RF design engineers with the largest commercially available family of wide bandgap MMIC products, Cree Inc. has developed five new GaN HEMT MMIC amplifiers that increase the range of frequencies available through X-Band.

As part of a sample release, the MMICs are currently available as bare die and are targeted to be available in packaged formats later this year.

“We are pleased to expand our existing GaN power amplifier MMIC line and introduce our first GaN LNA MMIC product. The introduction of these MMICs expands our leadership position in providing GaN solutions that improve system performance beyond what can be realized using traditional GaAs MMIC technology for applications such as communication systems, homeland defense, electronic warfare and radar from S-band through X-band,” said Jim Milligan, Cree director of RF & Microwave Products.

“By using our proven GaN MMIC process, the performance of these products can provide an attractive combination of power, efficiency and linearity for the system designer.”