PLANO, USA: Diodes Inc., a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, announced the DMP1245UFCL P-channel MOSFET. Helping to increase battery efficiency and reduce board space, the miniature DMP1245UFCL 12V P-channel enhancement mode MOSFET is designed to meet the requirements of designers of space-starved portable products including smartphones and tablet computers.
The MOSFET is provided in the ultra compact and thermally efficient DFN1616 package and is characterized by a very low RDS(on) that ensures conduction losses are kept to a minimum, thereby increasing battery life. For example, at 29mΩ at VGS of 4.5V the MOSFET’s on-resistance performance is 15% better than that of its closest rival, benefitting battery disconnect and general load-switching applications.
The DFN1616 has a typical off-board profile of 0.5mm, making it 20 percent thinner than competitor equivalents, and occupies a PCB area of just 2.56mm2, 55 percent of that occupied by alternative larger 2mm by 2mm packages.
DMP1245UFCL also offers users the advantage of an increase in protection against ESD. With gate protection specified at 3kV, 50 percent higher than nearest equivalents, the MOSFET is highly resistant to the effects of human-borne ESD.
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