IXYS Colorado intros IXZ421DF18N50 RF power module

FORT COLLINS, USA: IXYS Corp. has introduced the IXZ421DF18N50 RF power module by its IXYS Colorado division.

The IXZ421DF18N50 combines the popular DEIC421 gate driver IC with the ZMOS low capacitance 500V, 19A MOSFET to provide users with an RF switching module that enhances performance and simplifies design through reduced parasitic, smaller footprint and lower part count when compared with traditional discrete devices. The IXZ421DF18N50 can be operated at switching frequencies up to 30MHz and utilized in class D and E applications.

IXZ421DF18N50 features:
* MOSFET/Driver RF Power Module – the IXZ421DF18N50 contains a 500V, 19A MOSFET coupled with the DEIC421 driver IC.
* DC to 30MHz operation – the IXZ421DF18N50 is designed for use from DC to 30MHz for a wide variety of both switch mode and RF applications.
* Ideal for Class D and E RF applications – incorporating both the driver and MOSFET into the module reduces stray inductance and results in greater overall efficiency.
* Fast rise and fall times – the combination of high speed driver & MOSFET along with the DE475 high performance package makes the IXZ421DF18N50 an excellent choice for high power, short pulse and switching applications.
* Hybrid RF MOSFET/driver module – the RF power module reduces part count; provides for easier layout of RF power circuitry and minimizes parasitic circuit elements.
* Kelvin ground connections – aids in eliminating false triggering.
* Robust high power package – the IXZ421DF18N50 utilizes the low thermal impedance and isolated substrate of the DE475 package for improved power density.
* RoHS compliant – All IXYSRF devices are compliant with the RoHS standard and BeO free.