NXP claims breakthrough in MOSFET performance

EINDHOVEN, THE NETHERLANDS: NXP Semiconductors announced the world'’s first n-channel sub 1 Milliohm 25V MOSFET, PSMN1R2-25YL, boasting the lowest ever RDSon and best in class Figure of Merit.

This is the lowest ever RDSon MOSFET in a Power-SO8 package (Loss Free package: LFPAK) and is an extension to NXP’s existing MOSFET portfolio.

The newest generation MOSFET combines the high performance Power-S08 LFPAK package with latest Trench 6 generation silicon and offers numerous performance and reliability advantages in a wide variety of demanding applications such as: power OR-ring, motor control and high efficiency synchronous buck-regulators.

“The technology for producing MOSFETs is an ongoing race to improve performance,” says John David Hughes, Senior International Product Marketing Manager of NXP.

“We are using innovative techniques in the new Trench 6 process which further reduce the on-resistance. There are many advantages of the new Trench technology to our customers such as improved switching efficiency from the silicon and superior electrical and thermal resistance from the package. NXP’s Power-S08 (LFPAK) package is compatible with all widely accepted Power SO-8 PCB footprints.”

NXP’s world leading Trench 6 MOSFETs, PSMN1R2–25YL, has a typical RDSon of 0.9 mOhm for a 25V part in Power-S08 (LFPAK), and 1.0 mOhm (typical) for a 30V part.

In addition to the launch of the world’'s lowest RDSon MOSFET, NXP is announcing a new portfolio of products aimed at power supply, motion control, and industrial markets.

The range includes products with operating voltages of 25, 30, 40 and 80 volts, packaged in Power-S08 (LFPAK) and TO220.

MOSFET H-bridges optimize DC fan and inverter designs

DALLAS, USA: Diodes Inc., a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete and analog semiconductor markets, has announced a range of four H-bridge MOSFET packages that are set to dramatically simplify DC fan and Cold Cathode Fluorescent Lamp (CCFL) inverter circuits by reducing both component count and PCB size in space constrained applications.

Two 30V H-bridges, the ZXMHC3A01N8 and ZXMHC3F381N8, are well-suited for 12V DC fan and inverter applications and offer users a choice of low RDS(ON) performance. The 60V rated ZXMHC6A07N8 and 100V rated ZXMHC10A07N8 are industry firsts and are targeted at 24V DC and 48V DC motor control circuits, respectively.

Featuring dual complementary pairs of N- and P-type MOSFETs in an SO8 package, the ZXMHC parts can replace either four discrete SOT23 packaged MOSFETs or two SO8 complementary MOSFET packages.

The proprietary packaging enables significant reductions in the PCB footprint by at least 50 percent and in overall inventory cost for a wide range of existing motor or other inductive load drives.