IRVINE, USA: Microsemi Corp., a leading manufacturer of high performance analog/mixed signal integrated circuits and high reliability semiconductors, announced that DSCC qualification has been granted on a family of five new surface mount power Schottky diode devices.
These center tap and single diode constructions are designed to meet the rugged demands of high reliability applications. The U3 (SMD-0.5) ceramic package has an ultra efficient thermal path to keep the chip cool.
This enables the Schottky diodes, which unlike conventional rectifiers have little-to-no stored charge, to perform with low power losses in high speed switching circuits.
Features include:
* Schottky barrier construction for instantaneous switching speed.
* New lightweight surface mount hermetic package.
* Military temperature ratings: -65*C to +150*C.
* Low reverse leakage current & forward voltage drop ratings.
* Low thermal resistance
Showing posts with label Microsemi. Show all posts
Showing posts with label Microsemi. Show all posts
Wednesday, October 7, 2009
Wednesday, September 9, 2009
Microsemi extends new radiation hardened transistor product line
IRVINE, USA: Microsemi Corp., a leading manufacturer of high performance analog/mixed signal ICs and high reliability semiconductors, announced that DSCC qualification has been granted on their JANSR2N3439 and JANSR2N3440 radiation hardened medium power transistors.
With these latest approvals Microsemi has now qualified an additional 54 radiation hardened transistor products over the last year. This includes 44 new packaged device types and 10 newly-qualified radiation hardened die types for hybrid packaging applications.
These general purpose, small signal and medium power bipolar transistors are primarily used in aerospace, defense and satellite communication applications. They are specifically designed to perform in the severe environmental and radiation conditions that exist in space where component selection is essential to mission success.
Microsemi has worked closely with the Defense Supply Center Columbus (DSCC) to define the test specifications within standard military drawings (MIL-PRF-19500 slashsheets) so that customers can be assured of the radiation performance capabilities of these products.
With these latest approvals Microsemi has now qualified an additional 54 radiation hardened transistor products over the last year. This includes 44 new packaged device types and 10 newly-qualified radiation hardened die types for hybrid packaging applications.
These general purpose, small signal and medium power bipolar transistors are primarily used in aerospace, defense and satellite communication applications. They are specifically designed to perform in the severe environmental and radiation conditions that exist in space where component selection is essential to mission success.
Microsemi has worked closely with the Defense Supply Center Columbus (DSCC) to define the test specifications within standard military drawings (MIL-PRF-19500 slashsheets) so that customers can be assured of the radiation performance capabilities of these products.
Thursday, July 2, 2009
Microsemi power MOSFET has highest voltage in superjunction technology
IRVINE, USA: Microsemi Corp., a leading manufacturer of high performance ICs and high reliability semiconductors, has introduced a 900V COOLMOS switching MOSFET for high power, high performance applications.
The applications include power factor correction, server and telecom power systems, solar inverters, arc welding, plasma cutting, battery chargers, medical, semiconductor capital equipment and induction heating.
The new device has the highest voltage available in superjunction technology, while its on-resistance of 120mili-ohms is one-third that available with conventional 900V MOSFET devices.
Key performance features:
* Lowest FOM
* Extreme dv/dt rated
* Best On-Resistance in TO-247 Package
* Ultra low gate charge, Q(g)
* Avalanche energy rated
The 1K pricing for the new MOSFET is $14.17. Contact factory direct for additional pricing. Devices are available for immediate sampling.
The applications include power factor correction, server and telecom power systems, solar inverters, arc welding, plasma cutting, battery chargers, medical, semiconductor capital equipment and induction heating.
The new device has the highest voltage available in superjunction technology, while its on-resistance of 120mili-ohms is one-third that available with conventional 900V MOSFET devices.
Key performance features:
* Lowest FOM
* Extreme dv/dt rated
* Best On-Resistance in TO-247 Package
* Ultra low gate charge, Q(g)
* Avalanche energy rated
The 1K pricing for the new MOSFET is $14.17. Contact factory direct for additional pricing. Devices are available for immediate sampling.
Friday, June 26, 2009
Microsemi's new line of standard rectifier diode power modules
IRVINE, USA: Microsemi Corp. has introduced a new line of standard rectifier diode power modules with 21 standard dual diode modules and six three-phase bridge rectifier diode power modules for industrial, UPS, SMPS, and motor drive applications.
All the new standard rectifier diode modules are rated at 1600 volts with a low forward voltage rating.
"With Microsemi's double isolation glass passivated rectifier chips, our standard rectifier modules provide superior reliability and performance over conventional modules on the market," said Philippe Dupin, Director, Power Module Products, Power Products Group located in Bordeaux, France.
"Our new standard rectifier portfolio has full mechanical and electrical compatibility with other modules in the industry, allowing Microsemi to equip the full range of power devices in a system from the input rectifier to the inverter output," he added.
Dual rectifier diode modules with 36A, 60A, 70A, 100A and 120A currents are integrated in the Microsemi SD1 package while 165A and 190A are offered in the SD2 package. MSCD Module reference specify a diode phase leg configuration while PN with MSAD and MSKD prefix include a common anode and common cathode configuration respectively.
The SD1, SD2, SM2 and SM3 packages -- with footprints respectively of 20mm x 93mm, 34mm x 93mm, 42mm x 72mm and 54mm x 94mm -- are fully compatible with other standard packages in the industry. At 30mm tall, they are also compatible in height with many standard IGBT modules, so that all modules from the input rectifier bridge to the converter output can be connected with the same level of bus bar or printed circuit board.
Technical data sheets are available on the Microsemi website. Samples are available immediately. Prices range from $8.42 to $30.86 in quantities of 1K to 5K.
All the new standard rectifier diode modules are rated at 1600 volts with a low forward voltage rating.
"With Microsemi's double isolation glass passivated rectifier chips, our standard rectifier modules provide superior reliability and performance over conventional modules on the market," said Philippe Dupin, Director, Power Module Products, Power Products Group located in Bordeaux, France.
"Our new standard rectifier portfolio has full mechanical and electrical compatibility with other modules in the industry, allowing Microsemi to equip the full range of power devices in a system from the input rectifier to the inverter output," he added.
Dual rectifier diode modules with 36A, 60A, 70A, 100A and 120A currents are integrated in the Microsemi SD1 package while 165A and 190A are offered in the SD2 package. MSCD Module reference specify a diode phase leg configuration while PN with MSAD and MSKD prefix include a common anode and common cathode configuration respectively.
The SD1, SD2, SM2 and SM3 packages -- with footprints respectively of 20mm x 93mm, 34mm x 93mm, 42mm x 72mm and 54mm x 94mm -- are fully compatible with other standard packages in the industry. At 30mm tall, they are also compatible in height with many standard IGBT modules, so that all modules from the input rectifier bridge to the converter output can be connected with the same level of bus bar or printed circuit board.
Technical data sheets are available on the Microsemi website. Samples are available immediately. Prices range from $8.42 to $30.86 in quantities of 1K to 5K.
Wednesday, June 3, 2009
Microsemi intros next-gen LED chipset solution for LED backlit TV displays
IRVINE, USA: Microsemi Corp., a leading manufacturer of high performance analog/mixed signal integrated circuits and high reliability semiconductors, extended its comprehensive line of backlight-driving IC solutions with the production release of the company's LX24132 32-port LED backlight controller and LX23108L 8-port LED driver.
Microsemi's chipset provides a scalable, integrated solution for direct or edge-lit backlight applications in flat-panel LCD TV displays, and supports White LED or RGB LED implementations.
Its products are designed to provide outstanding performance and functionality in demanding LCD TV, notebook computers, automotive and other display platforms and applications. The chipset can easily be integrated with Microsemi's complementary light-sensor and color-management system solutions to deliver additional quality and functionality.
"Customers have been using Microsemi's proven CCFL solutions for many years in a variety of mainstream applications, and now they can take advantage of Microsemi second-generation LED driving technology for the most energy-efficient designs possible," said Tom Kapucija, director of marketing at Microsemi's Analog Mixed Signal Group. "Microsemi is committed to supporting its customers during their implementation of this new and efficient green LCD TV display technology."
Microsemi's chipset provides a scalable, integrated solution for direct or edge-lit backlight applications in flat-panel LCD TV displays, and supports White LED or RGB LED implementations.
Its products are designed to provide outstanding performance and functionality in demanding LCD TV, notebook computers, automotive and other display platforms and applications. The chipset can easily be integrated with Microsemi's complementary light-sensor and color-management system solutions to deliver additional quality and functionality.
"Customers have been using Microsemi's proven CCFL solutions for many years in a variety of mainstream applications, and now they can take advantage of Microsemi second-generation LED driving technology for the most energy-efficient designs possible," said Tom Kapucija, director of marketing at Microsemi's Analog Mixed Signal Group. "Microsemi is committed to supporting its customers during their implementation of this new and efficient green LCD TV display technology."
Friday, May 29, 2009
Microsemi's new line of three-level inverter power modules for solar converters
IRVINE, USA: Microsemi Corp., a leading manufacturer of high performance analog mixed signal ICs and high reliability semiconductors, has launched a new line of 20 standard three-level inverter power modules designed for solar converter applications.
"The introduction of these 20 three-level inverter power modules provides a wide range of solutions in terms of technologies and power ratings for solar inverter manufacturers," said Philippe Dupin, Director, Power Module Products, Power Products Group located in Bordeaux, France. "With very low profile and minimum parasitics these modules can enable very compact systems and the highest possible efficiencies, particularly if SiC diodes are used as replacements of FREDs," he added.
The standard modules are available in 600V and 1200V voltage for full IGBT configuration and in 600V and 900V for a mix of MOSFET and IGBT technology. Each module integrates a leg of the inverter such that three identical modules are used to achieve a 3-phase solar inverter. The modules are available in SP1, SP3 and SP6 packages.
Most of the 600V IGBT devices are offered with Trench and Field stop technology. Current specifications vary from 20A to 300A. Modules with current rating from 20A to 50A are integrated in SP1 and SP3 packages. Modules in SP1 packages offer a low-cost solution while equivalent modules in SP3 provide optional features such as an NTC thermistor for temperature monitoring and improved Kelvin connections for easier drive power devices.
The SP3 module range extends to 100A/600V and is also offered in 1200V with 60A current. At the high current end, standard modules with 150A, 200A and 300A currents are specified in the larger SP6 package with screw terminals.
Should the specified operating frequency be higher than 20 kHz, fast NPT IGBT modules are offered at 30A in SP1 and SP3 and 50A in SP3 to meet aggressive efficiency targets.
"The introduction of these 20 three-level inverter power modules provides a wide range of solutions in terms of technologies and power ratings for solar inverter manufacturers," said Philippe Dupin, Director, Power Module Products, Power Products Group located in Bordeaux, France. "With very low profile and minimum parasitics these modules can enable very compact systems and the highest possible efficiencies, particularly if SiC diodes are used as replacements of FREDs," he added.
The standard modules are available in 600V and 1200V voltage for full IGBT configuration and in 600V and 900V for a mix of MOSFET and IGBT technology. Each module integrates a leg of the inverter such that three identical modules are used to achieve a 3-phase solar inverter. The modules are available in SP1, SP3 and SP6 packages.
Most of the 600V IGBT devices are offered with Trench and Field stop technology. Current specifications vary from 20A to 300A. Modules with current rating from 20A to 50A are integrated in SP1 and SP3 packages. Modules in SP1 packages offer a low-cost solution while equivalent modules in SP3 provide optional features such as an NTC thermistor for temperature monitoring and improved Kelvin connections for easier drive power devices.
The SP3 module range extends to 100A/600V and is also offered in 1200V with 60A current. At the high current end, standard modules with 150A, 200A and 300A currents are specified in the larger SP6 package with screw terminals.
Should the specified operating frequency be higher than 20 kHz, fast NPT IGBT modules are offered at 30A in SP1 and SP3 and 50A in SP3 to meet aggressive efficiency targets.
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