ROHM silicon carbide schottky diodes push performance envelope

SAN DIEGO, USA: ROHM Semiconductor announced the availability of the SCS1xxAGC series of high-performance silicon carbide (SiC) Schottky barrier diodes (SBD).

This new class of SiC diodes offers industry-leading low forward voltage and fast recovery time, leading to improved power conversion efficiency in applications such as PFC/power supplies, solar panel inverters, uninterruptible power supplies, air conditioners and others.

The SCS1xxAGC series maintains low forward voltage over a wide operating temperature range which results in lower power dissipation under actual operating conditions. For example, the 10 A rated part has a VF of 1.5 V at 25 degrees C and 1.6 V at 150 degrees C. Low VF reduces conduction loss while the ultra-short reverse recovery time (15 ns, typical) enables high-speed switching and minimizes switching loss.

With the acquisition of SiCrystal AG, ROHM Semiconductor possesses total manufacturing capability for SiC semiconductors from ingot formation to power device fabrication. This allows the rapid development of advanced products and complete control of raw materials for industry leading reliability and quality.

David Doan, senior Technical Product Marketing Manager, ROHM Semiconductor, said: "SiC is the ideal material for power electronics with its high breakdown voltage, low power loss, high operating temperature and superior thermal conductivity. ROHM is not the first vendor to offer SiC SBDs, but we're introducing devices with some differentiating features such as low VF and the highest current rating at 600 V (a true 600 V/20 A SBD, not dual 2x10 A). These diodes are but the first in ROHM's SiC product lineup. We also have 1200 V SBDs and MOSFETs, currently in sampling at strategic partners, to address higher power applications such as UPS and to enable all-SiC power devices."