Diodes Inc. announces dual self-protected MOSFETs

DALLAS, USA: Diodes Inc., a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, has introduced dual self-protected low side MOSFETs optimized for use in the harshest electrical environments.

These devices provide automotive and industrial applications with enhanced levels of circuit protection and improvements in overall circuit reliability. With an Rthj-a rating of 95OC/W, the SM8 packaged devices offer a thermal efficiency that is 30 percent better than that of alternative SO8 packaged devices, ensuring cooler running.

The latest additions to the IntelliFET product line, the space saving 60V rated N-channel ZXMS6004DT8 and ZXMS6005DT8 integrate over-temperature, over-current, over-voltage and input ESD protection on each of their two independent and isolated switching channels. The MOSFETs handle nominal load currents of 1.2A and 1.8A, respectively, and present on-resistances of only 500mΩ and 200mΩ. Both devices have an inductive clamping energy rating of 210mJ.

Two additional single channel devices have also been announced by Diodes, the ZXMS6005DG and ZXMS6005SG, offering the same level of protection as the duals and providing a cost effective alternative to competing single channel self protected MOSFET solutions.