Friday, June 25, 2010

Diodes Inc. announces rugged MOSFETs

DALLAS, USA: Diodes Inc. has extended its MOSFET product line with the introduction of 60V N-channel devices tailored for use in VoIP communication equipment.

Designed to handle the high pulse current needed to generate tip and ring linefeeds and to withstand the avalanche energy induced during switching, the DMN60xx series meets the stringent requirements of the primary switch position in transformer based Subscriber Line Interface Circuits (SLIC) DC/DC converters.

Diodes has introduced four products, offering a choice of four different industry standard package options: DMN6068SE in SOT223, DMN6068LK3 in TO252 and in SO8, the single MOSFET DMN6066SSS and the dual MOSFET DMN6066SSD; the latter replacing two separate devices to help reduce component count and PCB footprint.

The MOSFETs’ low gate charge and input capacitance mean that they can be driven with minimal or no buffering at low logic level voltages, so simplifying SLIC circuit design and further reducing component count and cost. Device gate charge and on-resistance performance have been balanced to deliver the requisite figure of merit for VoIP applications, including cable and DSL modems, analog terminal adaptors and private branch exchanges.

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