DALLAS, USA: Diodes Inc., a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, has introduced the first products from its proprietary DIOFET process that monolithically integrates a power MOSFET and anti-parallel Schottky diode into a single die.
Used in the low side MOSFET position of synchronous buck point-of-load (PoL) converters, the DMS3014SSS and DMS3015SSS improve the efficiency and lower the operating temperature of fast switching PoL converters in high volume computing, telecom and industrial applications.
With typical RDS(ON) ratings of only 10mΩ and 8.5mΩ, respectively, at VGS of 10V, these devices minimize the conduction losses traditionally associated with low side MOSFETs.
At the same time, the forward voltage of the DIOFET’s integrated Schottky diode is 25 percent lower than comparable MOSFET/schottky solutions and 48 percent lower than that of the intrinsic body diode of a typical MOSFET, thereby minimizing switching losses and improving efficiency. The low QRR of DIOFETs integrated schottky and softer reverse recovery characteristics further contribute toward minimizing body diode switching losses.
In benchmark tests, the DIOFETs operate at a temperature that is 5 percent lower than that of competing solutions. As every 10oC reduction in MOSFET junction temperature doubles lifetime reliability, the lower operating temperature of the DIOFETs increases the reliability of the PoL converter.