JAPAN: Toshiba Corp. has launched high-speed diodes based on the 4th generation 600V system super junction MOSFET "DTMOSIV" series.
Using the latest single epitaxial process, the new series has reduced the RON•A (On-resistance per area) by approximately 30 percent compared to existing products, to achieve the leading level in the industry.
Also, high-speed parasitic diodes achieve a reverse recovery time of approximately one-third that of existing products(Note3), reducing loss and contributing to improved power efficiency.
* 30 percent reduction in RON•A compared with existing products (DTMOSIII series).
High-speed parasitic diodes achieve a reverse recovery time of approximately one-third that of existing products.
* Use of the single epitaxial process secures small increases in ON-resistance and reverse recovery times at high temperatures.
* Wide line-up for ON-resistance (0.65 to 0.074Ω).
* Wide line-up of packages.