GaN technology allows significantly higher output powers--50W for GaN vs. 30W for GaAs. Tuned for operation from 13.75 to 14.5 GHz, the new SGK1314-50A PA is internally matched for extended Ku SATCOM band to provide optimum power and gain in a 50-ohm system.
"Our expertise in GaN technology offers new possibilities to SATCOM applications. The new GaN PAs provide the ability to simplify the design by reducing the number of required transistors," says John Wyatt, president of Sumitomo Electric Device Innovations USA. "For example, the 50W GaN HEMT replaces 2 GaAs FETs and also provides higher gain and efficiency."