JAPAN: Toshiba Corp. announced the introduction of a 30V voltage power MOSFET line-up for general-purpose DC-DC converters used in base stations and servers.
The products use the latest 8th generation low-voltage trench structure and achieve the highest class[Note 1] of low ON-resistance and high-speed switching. Mass production is scheduled to start at the end of June.
The MOSFETs use the 8th generation low-voltage trench structure and achieves top class low ON-resistance. They achieve low internal gate resistance and a low gate capacity ratio (Cgd/Cgs), which contributes to prevention of the self turn-on phenomenon.