IRVINE, USA: Toshiba America Electronic Components Inc. (TAEC) has extended its LETERAS family of white LEDs. The new TL1L3 series features ultra-compact devices that combine cost-effective gallium nitride-on-silicon (GaN-on-Si) chips with an industrial standard 3535 lens type package.
High-performance white LEDs are typically fabricated on expensive sapphire substrates using relatively small 100mm or 150mm wafers. Toshiba's LETERAS LEDs use a cost-effective GaN-on-Si process technology that allows GaN LEDs to be produced on 200mm silicon wafers, which lowers costs for manufacturers of general purpose and industrial LED lighting. The integrated lenses in Toshiba's newest LEDs make them suitable for implementation in security lighting, road lights, LED bulbs, down lights, and more.
"White LEDs consume very little power and have long lives compared to incandescent light sources," stated Joseph Tso, business development manager for TAEC's optoelectronics group. "These two factors are major contributors to LEDs gaining widespread adoption in the general purpose lighting market, as well as a wide array of specialized lighting applications. LEDs are estimated to make up 53 percent of the global lighting market over the next few years, and the time is now to transition from standard lighting. Our LETERAS family gives designers the flexibility to make this transition – no matter what the end application."
Devices in the TL1L3 series of 1.0W LEDs are housed in a 3.5mm x 3.5mm package, with a height (including the lens) of just 2.42mm. Despite their small size, the LEDs deliver up to 145 lumens (typ), depending on the correlated color temperature (CCT).
The new TL1L3 LED series features seven devices that offer color temperatures from 2700K to 6500K. Minimum color rendering index (Ra) ratings of up to 80 contribute to natural-looking lighting. A low typical forward voltage (VF) of just 2.85V (at a forward current of 350mA) helps to keep power consumption at a minimum.