Thursday, March 14, 2013

ALD EPAD MOSFET arrays intro revolutionary control of independent devices

USA: Advanced Linear Devices Inc. (ALD), a design innovation leader in analog semiconductors, has announced an industry breakthrough in small signal, precision matched, low power MOSFETs by enabling independent control of each device within a quad package. This innovative capability will provide circuit designers with unprecedented flexibility in developing next-generation energy harvesting systems and low-power mobile devices.

The ALD210800A/ALD210800 Precision N-Channel MOSFET arrays featuring Zero-Threshold voltage establish new industry benchmarks for forward transconductance and output conductance. Designed with ALD’s proven EPAD CMOS technology, the arrays allow circuit designers to build ultra-low supply voltages that were never before possible.

Circuit design impact
The independent control of each device in the package will transform circuit design by enabling each MOSFET to be characterized with different input and output requirements. This further reduces size and weight in systems by shrinking the footprint of discrete MOSFET circuits up to 50 percent, significantly decreasing circuit board real estate, complexity, cost and time-to-market.

ALD210800A/ALD210800 Precision N-Channel MOSFET arrays can help designers reduce the number of batteries required for mobile devices. The game-changing flexibility of the devices is also suited for improving energy efficiency and battery life in medical devices, boosting audio quality in premium headphones and consumer devices, extending the operating range for energy harvesting systems, enhancing sensitivity in sensor arrays and many other ultra-low voltage and power applications.

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