Wednesday, March 20, 2013

Industry's first mass-produced SiC MOS module, without a Schottky diode

USA:  ROHM has started the mass-production of a 1200V/180A-rated SiC MOS module BSM180D12P2C101 for inverters/converters used in industrial equipment, photovoltaic power conditioners and the like.

This new module is the first to incorporate a power semiconductor comprised of just an SiC MOSFET, increasing the rated current to 180A for broader applicability while contributing to lower power consumption and greater compactness.

Next-generation SiC MOSFET technology is utilized to minimize conduction degradation of the body diode, eliminating the need for diode rectification. This makes it possible to increase the mounting area for higher current handling capability while maintaining the same compact form factor.

In addition, by improving processes and device structures related to crystal defects ROHM was able to overcome all problems related to reliability, including that of the body diode. The result is 50 percent less loss compared with conventional Si IGBTs used in general-purpose inverters. This decreased loss, along with an operating frequency greater than 50kHz, ensures compatibility with smaller peripheral components for greater end-product miniaturization.

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