PLANO, USA: Diodes Inc. has launched a line of high-efficiency N- and P-channel MOSFETs in low-profile DFN2020-6 packages. With an off-board height of only 0.4mm and a footprint of 4mm2, the DFN2020H4 packaged DMP2039UFDE4, a -25V rated P-channel device, is 50 percent thinner than competing devices. The other MOSFETs in the series are provided in the 0.5mm high DFN2020E package, which is 20 percent thinner than the common 0.6mm high alternatives.
Targeted at load-switching applications, the DMP2039UFDE4 also provides circuit designers with 3kV protection against human-borne electrostatic discharge. The new MOSFETs’ low typical RDS(on), for example just 13mΩ at a VGS of 4.5V for the -12V P-channel DMP1022UFDE, means conduction losses can also be minimized in battery-charging applications.
The 20V N-channel DMN2013UFDE makes an ideal load switch or high-speed switch in DC/DC buck and boost converters and again offers a high 2kV ESD protection rating. Operating at a VDS of 60V, the DMN6040UFDE is one of the first high-voltage MOSFETs to be introduced in the DFN2020 package and suits small form-factor industrial and HVAC controls.
Particularly well-suited to ultra-slim portable product designs, such as smart phones, tablets and digital cameras, the initial series of nine MOSFETs is comprised of -12V, -20V, -25V and -40V P-channel and 12V, 20V and 60V N-channel parts.