JAPAN: Toshiba Corp. has launched a 100V low-ON-resistance, low-leakage power MOSFET using the latest trench MOS process as the latest addition to its line-up for automotive applications.
The new product, "TK55S10N1", achieves low ON-resistance with a combination of a chip in the "U-MOS VIII-H series" fabricated with the latest 8th generation trench MOS process and a "DPAK+" package that utilizes copper connectors.
The product is primarily suited for automotive applications, especially those that demand high-speed switching, such as switching regulators. Samples are available now with mass production scheduled to start in April 2013.
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