USA: Toshiba America Electronic Components Inc. (TAEC), a committed leader that collaborates with technology companies to create breakthrough designs, has announced the addition of three new high current P-ch MOSFETs: the SSM6J505NU, SSM6J501NU and SSM6J503NU.
Supporting high currents for high power dissipation packages, the new MOSFETs make ideal charging switches for smartphones and other mobile devices with high current charging circuits.
As the battery capacity of smartphones and other mobile devices increases, the charging current increases as well. Toshiba used the latest UMOS VI process to design the SSM6J505NU, SSM6J501NU and SSM6J503NU in a small 2.0mm × 2.0mm × 0.75mm (UDFN6B) package that achieves low ON-resistance and allows large currents.
Toshiba's new low RDS(ON) MOSFETs are available now. Budgetary pricing begins at $0.13 for sampling quantities.